Coulomb blockade in low-mobility nanometer size Si MOSFET’s
نویسندگان
چکیده
منابع مشابه
High Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2000
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.61.7249